Nucleation and growth studies of large-area deposited WS₂ on flexible substrates

Abstract Transition metal dichalcogenides (TMDCs) such as tungsten disulfide (WS 2 ) are studied for advanced electronic and optical devices because of their unique versatile electrical, mechanical properties. For the use TMDC films in next-generation flexible electronics, large-area bottom-up synthesis on substrates needs to be mastered, understood controlled. In this study, we performed a detailed study nucleation growth WS layers deposited by metalorganic chemical vapor deposition (MOCVD) crystalline van-der-Waals material muscovite mica model substrate alkali-metal free glass AF 32 ® eco . The was using an all nitrogen-coordinated bis-imido-bis-amido based precursor combination with elemental sulfur co-reactant. On both substrates, at moderate temperature 600 °C verified Raman spectroscopy X-ray diffraction (XRD). However, mode density differ significantly. mica, initially planar triangular islands is observed, whereas untreated reveals out-off plane growth. Detailed XRD analysis show tensile strain indicating strong interaction from CVD grown underlying carrier material. order avoid substrate-semiconductor interaction, pre-treatment required. A plasma prior leads even amorphous substrates.